Nell’ambito del corso FOTONICA Laurea in Ingegneria Elettronica, venerdì 19 ottobre alle ore 9 in aula DS1, la Prof. Leslie Rusch Université Laval Quebec, Canada terrà un seminario dal titolo:
Silicon has numerous advantages over other platforms (i.e., LiNbO3 and InP), such as compatibility with CMOS fabrication process and the ability to manipulate polarization on-chip. Silicon photonics (SiP) devices have the potential to revolutionize optical systems; however, their design is more challenging compared to other platforms due to several nonlinear effects. We can optimize SiP system throughput by the joint optimization of SiP modulator design and system-level operating points. We have developed techniques that allow the SiP modulator designer to exploit awareness of the system optimization. The factors affecting the output of the modulator and limiting the optical signal to noise ratio are: 1) optical loss, 2) modulation loss (limited extinction ratio due to high Vπ), and 3) inter-symbol interference (ISI) induced by limited electro-optic modulator bandwidth. These three penalty sources are mutually dependent, and minimizing them separately does not necessarily minimize the overall modulator-induced penalty. The major difference between our techniques and previous ones is the incorporation of both modulator bandwidth limitations, and knowledge of the modulation format to be exploited. We have developed tools for both direct detection systems using pulse-amplitude modulation (PAM) and coherent detection systems using quadrature amplitude modulation (QAM).